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NAND128W3A2BN6E
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NAND128W3A2BN6E数据手册
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Micron Technology, Inc.
8000 S. Federal Way
PO Box 6
Boise, ID United States
Small Page SLC NAND Flash Termination (1 Year)
PCN: 32197
Published: 2017-01-16
Type:
End of Life
Description:
In an effort to maximize manufacturing efficiency for Micron’s SLC NAND Flash memory
product line, and to better align with industry trends, Micron will be discontinuing
production over the coming years of Small Page SLC NAND Flash devices produced in
its Fab-13 Singapore facility. This discontinuance action will allow Micron to better focus
efforts on supporting 34 and 25nm SLC NAND Flash products.
The Small Page SLC NAND Flash products contained in this notification provide a Last
Time Buy in July 2017, and a Last Time Ship in December 2017.
Micron is taking these actions to better focus efforts on supporting 34 and 25nm
SLC NAND Flash products that deliver the most value to our customers, and we
encourage customers to consider using one of Micron’s 1Gb SLC NAND Flash products
as a replacement to Small Page NAND for any new application or design.
Reason:
Manufacturing Efficiency
Product Affected:
Small Page SLC NAND - M2XA, M2YA, M4ZA
Affected Micron Part Number
Customer Part Number
Component
NAND128W3A0BN6F

NAND128W3A2BN6E 数据手册

Micron(镁光)
56 页 / 0.92 MByte
Micron(镁光)
60 页 / 1.1 MByte
Micron(镁光)
3 页 / 0.22 MByte

NAND128W3A2BN6 数据手册

ST Microelectronics(意法半导体)
128兆, 256兆, 512兆, 1千兆( X8 / X16 ), 528字节/字264页, 1.8V / 3V , NAND闪存 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
Micron(镁光)
Micron(镁光)
MICRON  NAND128W3A2BN6E  闪存, 与非, 128 MB, 16K x 8位, TSOP, 48 引脚
Micron(镁光)
ST Microelectronics(意法半导体)
128兆, 256兆, 512兆, 1千兆( X8 / X16 ), 528字节/字264页, 1.8V / 3V , NAND闪存 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
ST Microelectronics(意法半导体)
128兆, 256兆, 512兆, 1千兆( X8 / X16 ), 528字节/字264页, 1.8V / 3V , NAND闪存 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
ST Microelectronics(意法半导体)
128兆, 256兆, 512兆, 1千兆( X8 / X16 ), 528字节/字264页, 1.8V / 3V , NAND闪存 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
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