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NCP1117DTAG 其他数据使用手册 - ON Semiconductor(安森美)
制造商:
ON Semiconductor(安森美)
分类:
稳压芯片
封装:
TO-252-3
描述:
ON SEMICONDUCTOR NCP1117DTAG 新
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P1Hot
典型应用电路图在P2
封装尺寸在P17P18
焊盘布局在P18
型号编码规则在P1P12P13P19
标记信息在P1P14P15P16P17P18P19
封装信息在P12P13
技术参数、封装参数在P12P13
应用领域在P1P2P9P13
电气规格在P3P4
型号编号列表在P2
导航目录
NCP1117DTAG数据手册
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of 19 Go
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NCP1117, NCP1117I, NCV1117
www.onsemi.com
6
0
20
40
60
80
100
10 100 1.0 k 10 k 100 k
0
20
40
60
80
100
0 200 400 600 800 1000
I
out
, OUTPUT CURRENT (mA)
RR, RIPPLE REJECTION (dB)
f
ripple
= 20 kHz
V
ripple
v 0.5 V
P−P
V
out
= 5.0 V
V
in
− V
out
= 3.0 V
C
out
= 10 mF
C
adj
= 25 mF
T
A
= 25°C
f
ripple
, RIPPLE FREQUENCY (Hz)
RR, RIPPLE REJECTION (dB)
V
out
= 5.0 V
V
in
− V
out
= 3.0 V
I
out
= 0.5 A
C
out
= 10 mF
C
adj
= 25 mF, f > 60 Hz
V
ripple
v 3.0 V
P−P
V
ripple
v 0.5 V
P−P
V
in
− V
out
w 3.0 V
Figure 10. NCP1117XTA Ripple Rejection
vs. Output Current
Figure 11. NCP1117XTA Ripple Rejection
vs. Frequency
Figure 12. Output Capacitance vs. ESR
Figure 13. Typical ESR vs. Output Current
f
ripple
= 120 Hz
V
ripple
v 3.0 V
P−P
V
in
− V
out
w V
dropout
C
adj
= 200 mF, f v 60 Hz
T
A
= 25°C
0.1
1
10
100
0.001 0.01 0.1 1 10
ESR, EQUIVALENT SERIES RESISTANCE (W)
OUTPUT CAPACITANCE (mF)
V
in
= 3.0 V
V
out
= 1.25 V
I
load
= 5 mA − 1 A
C
in
= 10 mF MLCC
T
J
= 25°C
Region of Instability
Region of Stability
0.01
0.1
1
10
0 100 500 900 1000
I
out
, OUTPUT CURRENT (mA)
ESR, EQUIVALENT SERIES RESISTANCE (W)
V
in
= 3.0 V
V
out
= 1.25 V
C
in
= 10 mF MLCC
C
out
= 10 mF
T
J
= 25°C
Region of Instability
Region of Stability
200 600300 700400 800
0
50E−9
100E−9
150E−9
200E−9
250E−9
10 100 1.0 k 10 k 100 k
FREQUENCY (Hz)
V/sqrt (Hz)
C
in
= 10 mF Tantalum
C
out
= 10 mF Tantalum
V
in
− V
out
= 3.0 V
Figure 14. Output Spectral Noise Density vs.
Frequency, V
out
= 1V5
300E−9
350E−9
1 A
0.5 A
0.1 A
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