Datasheet 搜索 > 齐纳二极管 > NXP（恩智浦） > PUSB3FR4Z 数据手册 > PUSB3FR4Z 其他数据使用手册 1/15 页
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PUSB3FR4Z 其他数据使用手册 - NXP（恩智浦）
制造商:
NXP（恩智浦）
分类:
齐纳二极管
封装:
DFN2510-10
Pictures:
3D模型
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PUSB3FR4Z数据手册
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1. Product profile
1.1 General description
The device is designed to protect high-speed interfaces such as SuperSpeed USB 3.1 at
10 Gbps, High-Definition Multimedia Interface (HDMI), DisplayPort, external Serial
Advanced Technology Attachment (eSATA) and Low Voltage Differential Signaling (LVDS)
interfaces against ElectroStatic Discharge (ESD).
The device includes four high-level ESD protection diode structures. They protect
sensitive transmitters and receivers for ultra high-speed signal lines. The device is
encapsulated in a leadless small DFN2510A-10 (SOT1176-1) plastic package.
All signal lines are protected by a special diode configuration offering ultra low line
capacitance of only 0.29 pF. These diodes utilize a snap-back structure in order to provide
protection to downstream components from ESD voltages up to 15 kV contact exceeding
IEC 61000-4-2, level 4.
1.2 Features and benefits
System-level ESD protection for USB 2.0 and SuperSpeed USB 3.1 at 10 Gbps,
HDMI, DisplayPort, eSATA and LVDS
Line capacitance of only 0.29 pF for each channel
Outstanding system protection: extremely deep snap-back combined with dynamic
resistance of only 0.27 .
All signal lines with integrated rail-to-rail clamping diodes for downstream
ESD protection of 15 kV exceeding IEC 61000-4-2, level 4
Matched 0.5 mm trace spacing
Signal lines with 0.05 pF matching capacitance between signal pairs
Design-friendly ‘pass-through’ signal routing
1.3 Applications
The device is designed for high-speed receiver and transmitter port protection:
Smartphones, tablet computers, Mobile Internet Devices (MID) and portable devices
TVs and monitors
DVD recorders and players
Notebooks, main board graphic cards and ports
Set-top boxes and game consoles
PUSB3FR4
ESD protection for ultra high-speed interfaces
Rev. 1 — 26 January 2015 Product data sheet
XSON10
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