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RURD620CCS9A数据手册
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Electrical Specifications
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNIT
V
F
- - 1.0 V
- - 0.83 V
I
R
- - 100 µA
- - 500 µA
t
rr
--25ns
--30ns
t
a
- 13 - ns
t
b
- 6.5 - ns
Q
rr
- 20 - nC
C
J
I
F
= 6 A
I
F
= 6 A, T
C
= 150
o
C
V
R
= 200 V
V
R
= 200 V, T
C
= 150
o
C
I
F
= 1 A, dI
F
/dt = 200 A/µs
I
F
= 6 A, dI
F
/dt = 200 A/µs
I
F
= 6 A, dI
F
/dt = 200 A/µs
I
F
= 6 A, dI
F
/dt = 200 A/µs
I
F
= 6 A, dI
F
/dt = 200 A/µs
V
R
= 10 V, I
F
= 0 A
- 30 -
pF
R
θJC
- - 3.5
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300 µs, D = 2%).
I
R
= Instantaneous reverse current.
T
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
rr
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θJC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
V
F
, FORWARD VOLTAGE (V)
I
F
, FORWARD CURRENT (A)
1
30
0.5
10
0
0.25 0.5 0.75 1 1.25 1.5
25
o
C
100
o
C
175
o
C
V
R
, REVERSE VOLTAGE (V)
0 20050 150100
100
0.01
0.1
1
10
I
R
, REVERSE CURRENT (µA)
0.001
25
o
C
100
o
C
175
o
C
RURD620CCS9A
www.fairchildsemi.com
2
©2001 Fairchild Semiconductor Corporation
RHRD620CC9SA Rev
. C

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