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SBL3040PT-E3 其他数据使用手册 - Vishay Semiconductor（威世）
制造商:
Vishay Semiconductor（威世）
分类:
肖特基二极管
封装:
TO-247
描述:
VISHAY SBL3040PT-E3 小信号肖特基二极管, 双共阴极, 40 V, 30 A, 550 mV, 275 A, 125 °C
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SBL3040PT-E3数据手册
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若手册格式错乱，请下载阅览PDF原文件
SBL3030PT, SBL3040PT
www.vishay.com
Vishay General Semiconductor
Revision: 17-Aug-15
1
Document Number: 88732
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
I
F(AV)
30 A
V
RRM
30 V, 40 V
I
FSM
275 A
V
F
0.55 V
T
J
max. 125 °C
Package TO-247AD (TO-3P)
Diode variations Common cathode
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SBL3030PT SBL3040PT UNIT
Maximum repetitive peak reverse voltage V
RRM
30 40 V
Maximum RMS voltage V
RWM
21 28 V
Maximum DC blocking voltage V
DC
30 40 V
Maximum average forward rectified current (fig. 1) I
F(AV)
30 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I
FSM
275 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +125 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS SBL3030PT SBL3040PT UNIT
Maximum instantaneous forward voltage
per diode
V
F
(1)
15 A 0.55 V
Maximum instantaneous reverse current at rated
DC blocking voltage per diode
I
R
(1)
T
C
= 25 °C 1.0 mA
T
C
= 100 °C 75 mA
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