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STD11N65M2 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
中高压MOS管
封装:
TO-252-3
描述:
STMICROELECTRONICS STD11N65M2 功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
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STD11N65M2数据手册
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September 2015
DocID026376 Rev 4
1/22
This is information on a product in full production.
www.st.com
STD11N65M2, STP11N65M2,
STU11N65M2
N-channel 650 V, 0.6 Ω typ., 7 A MDmesh™ M2
Power MOSFET in DPAK, TO-220 and IPAK packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
V
DS
R
DS(on)
max.
I
D
P
TOT
STD11N65M2
650 V
0.68 Ω
7 A
85 W
STP11N65M2
STU11N65M2
Extremely low gate charge
Excellent output capacitance (C
OSS
) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STD11N65M2
11N65M2
DPAK
Tape and reel
STP11N65M2
TO-220
Tube
STU11N65M2
IPAK
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