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STD11N65M5 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
N 通道 MDmesh™ M5 系列，STMicroelectronicsMDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。### MOSFET 晶体管，STMicroelectronics
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P10P11P12P13P14P15P16P17P18P19P20
标记信息在P1
封装信息在P1P21P22P23
技术参数、封装参数在P3
应用领域在P1P25
电气规格在P4P5P6P7P8
导航目录
STD11N65M5数据手册
Page:
of 25 Go
若手册格式错乱，请下载阅览PDF原文件
This is information on a product in full production.
December 2012 Doc ID 022864 Rev 2 1/25
25
STB11N65M5, STD11N65M5, STF11N65M5,
STP11N65M5, STU11N65M5
N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET
in D
2
PAK, DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet — production data
Features
■ Worldwide best R
DS(on)
* area
■ Higher V
DSS
rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Figure 1. Internal schematic diagram
Order codes
V
DSS
@
T
Jmax
R
DS(on)
max
I
D
STB11N65M5
710 V < 0.48 Ω 9 A
STD11N65M5
STF11N65M5
STP11N65M5
STU11N65M5
D
2
PAK
TO-220
TO-220FP
DPAK
1
3
2
TAB
1
2
3
1
2
3
TAB
1
3
TAB
2
3
2
1
IPAK
!-V
$4!"
'
3
Table 1. Device summary
Order codes Marking Package Packaging
STB11N65M5
11N65M5
D
2
PA K
Tape and reel
STD11N65M5 DPAK
STF11N65M5 TO-220FP
TubeSTP11N65M5 TO-220
STU11N65M5 IPAK
www.st.com
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