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This is information on a product in full production.
March 2014 DocID024569 Rev 3 1/21
21
STB13N60M2,
STD13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Q
g
Power MOSFETs in D
2
PAK and DPAK packages
Datasheet
production data
Figure 1. Internal schematic diagram
Features
Extremely low gate charge
Lower R
DS(on)
x area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q
g
. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
AM15572v1
, TAB
DPAK
D
2
PAK
1
3
TAB
1
3
TAB
Order codes V
DS
@ T
Jmax
R
DS(on)
max I
D
STB13N60M2
650 V 0.38 Ω 11 A
STD13N60M2
Table 1. Device summary
Order codes Marking Package Packaging
STB13N60M2
13N60M2
D
2
PAK
Tape and reel
STD13N60M2 DPAK
www.st.com

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