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STD13N60M2
2.322
导航目录
  • 封装尺寸在P9
  • 标记信息在P1
  • 封装信息在P1
  • 功能描述在P1
  • 技术参数、封装参数在P2
  • 应用领域在P1
  • 电气规格在P3P4P5P6P7
STD13N60M2数据手册
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1
3
TAB
2
3
DPAK
TAB
1
D
2
PAK
2
D(2, TAB)
G(1)
S(3)
NG1D2TS3Z
Features
Order code
V
DS
@T
JMAX.
R
DS(on)
max. I
D
Package
STB13N60M2
650 V 0.38 Ω 11 A
D²PAK
STD13N60M2 DPAK
Extremely low gate charge
Excellent output capacitance (C
OSS
) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs developed using the MDmesh™ M2
technology. Thanks to their strip layout and improved vertical structure, these devices
exhibit low on-resistance and optimized switching characteristics, rendering them
suitable for the most demanding high-efficiency converters.
Product status link
STB13N60M2
STD13N60M2
Product summary
Order code STB13N60M2
Marking 13N60M2
Package D²PAK
Packing Tape and reel
Order code STD13N60M2
Marking 13N60M2
Package DPAK
Packing Tape and reel
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh™ M2 Power MOSFETs in D²PAK
and DPAK packages
STB13N60M2, STD13N60M2
Datasheet
DS9632 - Rev 5 - February 2019
For further information contact your local STMicroelectronics sales office.
www.st.com

STD13N60M2 数据手册

ST Microelectronics(意法半导体)
24 页 / 0.84 MByte
ST Microelectronics(意法半导体)
22 页 / 1.46 MByte
ST Microelectronics(意法半导体)
23 页 / 0.76 MByte

STD13N60 数据手册

ST Microelectronics(意法半导体)
N 通道 MDmesh™ M2 系列,STMicroelectronicsMDmesh M2 系列功率 MOSFET 非常适合用于谐振型电源(LLC 转换器)。 其配置具有低栅极电荷,以及极佳的输出电容。### MOSFET 晶体管,STMicroelectronics
ST Microelectronics(意法半导体)
N-沟道 600 V 0.365 Ohm 表面贴装 MDmesh™ DM2 功率 Mosfet - DPAK-3
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