Datasheet 搜索 > MOS管 > ST Microelectronics（意法半导体） > STD16N65M5 数据手册 > STD16N65M5 产品封装文件 1/19 页
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STD16N65M5 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
STMICROELECTRONICS STD16N65M5 功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
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STD16N65M5数据手册
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of 19 Go
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1
3
TAB
2
DPAK
AM01475v1_noZen
D(2, TAB)
G(1)
S(3)
Features
Order codes
V
DS
at T
jmax.
R
DS(on)
max. I
D
STD16N65M5 710 V 0.279 Ω 12 A
• Extremely low R
DS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative
vertical process technology combined with the well-known PowerMESH™ horizontal
layout. The resulting product offers extremely low on-resistance, making it particularly
suitable for applications requiring high power and superior efficiency.
Product status link
STD16N65M5
Product summary
Order code STD16N65M5
Marking 16N65M5
Package DPAK
Packing Tape and reel
N-channel 650 V, 0.230 Ω typ., 12 A MDmesh™ M5 Power MOSFET
in a DPAK package
STD16N65M5
Datasheet
DS7011 - Rev 3 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
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