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STD35P6LLF6 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
STD35P6LLF6 编带
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STD35P6LLF6数据手册
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February 2015
DocID025600 Rev 2
1/16
This is information on a product in full production.
www.st.com
STD35P6LLF6
P-channel 60 V, 0.025 Ω typ., 35 A STripFET™ F6
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code V
DSS
R
DS(on)
max. I
D
P
TOT
STD35P6LLF6 60 V 0.028 Ω 35 A 70 W
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all
packages.
For the P-channel Power MOSFET, current
polarity of voltages and current have to be
reversed.
Table 1: Device summary
Order code Marking Package Packaging
STD35P6LLF6 35P6LLF6 DPAK Tape and Reel
AM11258v1
D(2, TAB)
S(3)
G(1)
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