Datasheet 搜索 > MOS管 > ST Microelectronics（意法半导体） > STD5N60M2 数据手册 > STD5N60M2 产品封装文件 1/27 页
￥ 7.315
STD5N60M2 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
N-沟道 600 V 3.5 A 1.4 Ohm 表面贴装 MDmesh II Plus Mosfet - DPAK
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
STD5N60M2数据手册
Page:
of 27 Go
若手册格式错乱，请下载阅览PDF原文件
1
3
3
2
1
1
2
3
TAB TAB
TAB
DPAK
TO-220
IPAK
D(2, TAB)
G(1)
S(3)
NG1D2TS3Z
Features
Order code
V
DS
@ T
Jmax
R
DS(on)
max. I
D
STD5N60M2
650 V 1.4 Ω 3.5 ASTP5N60M2
STU5N60M2
• Extremely low gate charge
• Excellent output capacitance (C
OSS
) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using the MDmesh™ M2
technology. Thanks to their strip layout and improved vertical structure, these devices
exhibit low on-resistance and optimized switching characteristics, rendering them
suitable for the most demanding high-efficiency converters.
Product status links
STD5N60M2
STP5N60M2
STU5N60M2
N-channel 600 V, 1.3 Ω typ., 3.5 A, MDmesh™ M2
Power MOSFETs in DPAK, TO-220 and IPAK packages
STD5N60M2, STP5N60M2, STU5N60M2
Datasheet
DS9958 - Rev 5 - October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
