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STD5N60M2 其他数据使用手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
N-沟道 600 V 3.5 A 1.4 Ohm 表面贴装 MDmesh II Plus Mosfet - DPAK
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STD5N60M2数据手册
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June 2016
DocID025318 Rev 4
1/22
This is information on a product in full production.
www.st.com
STD5N60M2, STP5N60M2,
STU5N60M2
N-channel 600 V, 1.3 Ω typ., 3.5 A MDmesh™ M2
Power MOSFET in DPAK, TO-220 and IPAK packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
V
DS
@ T
Jmax
R
DS(on)
max.
I
D
STD5N60M2
650 V
1.4 Ω
3.5 A
STP5N60M2
STU5N60M2
Extremely low gate charge
Excellent output capacitance (C
OSS
) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STD5N60M2
5N60M2
DPAK
Tape and reel
STP5N60M2
TO-220
Tube
STU5N60M2
IPAK
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