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STD5N95K5 产品封装文件 - ST Microelectronics（意法半导体）
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ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
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N 通道 MDmesh™ K5 系列，SuperMESH5™, STMicroelectronics### MOSFET 晶体管，STMicroelectronics
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STD5N95K5数据手册
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DocID024639 Rev 3 3/19
STD5N95K5, STF5N95K5, STP5N95K5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
DPAK, TO-220 TO-220FP
V
GS
Gate- source voltage 30 V
I
D
Drain current (continuous) at T
C
= 25 °C 3.5 3.5
(1)
1. Limited by maximum junction temperature
A
I
D
Drain current (continuous) at T
C
= 100 °C 2.2 2.2
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 14 A
P
TOT
Total dissipation at T
C
= 25 °C 70 25 W
I
AR
Max current during repetitive or single
pulse avalanche
1A
E
AS
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V)
70 mJ
dv/dt
(3)
3. I
SD
≤ 3.5 A, di/dt ≤ 100 A/μs, V
DSPeak
≤ V
(BR)DSS
Peak diode recovery voltage slope 4.5 V/ns
dv/dt
(4)
4. V
SD
≤ 640 V
MOSFET dv/dt ruggedness 50 V/ns
V
ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;T
C
=25 °C)
2500 V
T
j
T
stg
Operating junction temperature
Storage temperature
- 55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
DPAK, TO-220 TO-220FP
R
thj-case
Thermal resistance junction-case max 1.47 5 °C/W
R
thj-amb
Thermal resistance junction-ambient max 62.5 °C/W
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