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STD7N52K3 产品封装文件 - ST Microelectronics（意法半导体）
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ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
N 通道 MDmesh™ K3 系列，SuperMESH3™, STMicroelectronics### MOSFET 晶体管，STMicroelectronics
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STD7N52K3数据手册
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Electrical characteristics STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
4/22 Doc ID 14896 Rev 4
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 1 mA, V
GS
= 0 525 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating, T
C
=125 °C
1
50
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20 V ± 10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 50 µA 3 3.75 4.5 V
R
DS(on
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 3 A 0.72 0.85 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0
-
870
70
13
-
pF
pF
pF
C
o(tr)
(1)
1. C
oss eq.
time related is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent
capacitance time
related
V
DS
= 0 to 520 V, V
GS
= 0 - 53 - pF
R
G
Intrinsic gate
resistance
f = 1 MHz open drain - 3.5 - Ω
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 420 V, I
D
= 6 A,
V
GS
= 10 V
(see Figure 20)
-
33
6
21
-
nC
nC
nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V
DD
= 260 V, I
D
= 3 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 19)
-
13
11
36
19
-
ns
ns
ns
ns
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