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STD7N52K3 产品封装文件 - ST Microelectronics（意法半导体）
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ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
N 通道 MDmesh™ K3 系列，SuperMESH3™, STMicroelectronics### MOSFET 晶体管，STMicroelectronics
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STD7N52K3数据手册
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STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 Electrical characteristics
Doc ID 14896 Rev 4 5/22
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
6
24
A
A
V
SD
(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage I
SD
= 6 A, V
GS
= 0 - 1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 6 A, di/dt = 100 A/µs
V
DD
= 60 V (see Figure 24)
-
220
1800
16
ns
nC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 6 A, di/dt = 100 A/µs
V
DD
= 60 V, T
j
= 150 °C
(see Figure 24)
-
250
2200
18
ns
nC
A
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BV
GSO
(1)
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
Gate-source breakdown
voltage
Igs=± 1 mA (open drain) 30 - V
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