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TIL111VM 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
光耦合器/光隔离器
封装:
DIP-6
描述:
通用6引脚光电晶体管光耦合器 General Purpose 6-Pin Phototransistor Optocouplers
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TIL111VM数据手册
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若手册格式错乱，请下载阅览PDF原文件
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.3 4
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
*All Typical values at T
A
= 25°C
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
Emitter
V
F
Input Forward
Voltage
I
F
= 16 mA T
A
= 25°C TIL111M 1.2 1.4 V
I
F
= 10 mA for
MOC8100M,
I
F
= 16 mA for
TIL117M
T
A
= 0°C to 70°C MOC8100M,
TIL117M
1.2 1.4
T
A
= -55°C 1.32
T
A
= +100°C 1.10
I
R
Reverse Leakage
Current
V
R
= 3.0 V TIL111M, TIL117M 0.001 10 µA
V
R
= 6.0 V MOC8100M 0.001 10 µA
Detector
BV
CEO
Collector-Emitter
Breakdown Voltage
I
C
= 1.0 mA, I
F
= 0 All 30 100 V
BV
CBO
Collector-Base
Breakdown Voltage
I
C
= 10 µA, I
F
= 0 All 70 120 V
BV
EBO
Emitter-Base
Breakdown Voltage
I
E
= 10 µA, I
F
= 0 All 7 10 V
BV
ECO
Emitter-Collector
Breakdown Voltage
I
F
= 100 µA, I
F
= 0 TIL111M, TIL117M 7 10 V
I
CEO
Collector-Emitter
Dark Current
V
CE
= 10 V, I
F
= 0 TIL111M, TIL117M 1 50 nA
V
CE
= 5 V, T
A
= 25°C MOC8100M 0.5 25 nA
V
CE
= 30 V, I
F
= 0, T
A
= 70°C TIL117M,
MOC8100M
0.2 50 µA
I
CBO
Collector-Base Dark
Current
V
CB
= 10 V TIL111M, TIL117M 20 nA
I
CBO
V
CB
= 5 V MOC8100M 10 nA
C
CE
Capacitance V
CE
= 0 V, f = 1 MHz All 8 pF
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