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TIP36C 其他数据使用手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
双极性晶体管
封装:
TO-247-3
描述:
STMICROELECTRONICS TIP36C 单晶体管 双极, PNP, 100 V, 3 MHz, 125 W, 25 A, 50 hFE
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TIP36C数据手册
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C
omplemen
t
ary
Power
T
r
ansis
t
or
www
.element14.com
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.far
nell.com
www
.newark.com
Page <3>
14/02/13 V1.0
Figure - 2 DC Current Gain Figure - 3 Turn-Off Time
Figure - 4 Turn-On time
Figure - 5 Reverse Base Safe Operating Area
Figure - 6 Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown safe operating area curves indicate I
C
-V
CE
limits
of the transistor that must be observed for reliable operation
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate.
The data of Figure - 6 is based on T
C
= 25°C; T
J(pk)
is
variable depending on power level . Second breakdown
pulse limits are valid for duty cycle to 10% but must be
derated when T
C
≥25°C, second breakdown limitations do
not derate the same as thermal limitation.
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