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TLC27M4ID 其他数据使用手册 - TI(德州仪器)
制造商:
TI(德州仪器)
分类:
运算放大器
封装:
SOIC-14
描述:
TEXAS INSTRUMENTS TLC27M4ID 运算放大器, 四路, 525 kHz, 4个放大器, 0.43 V/µs, 4V 至 16V, SOIC, 14 引脚
Pictures:
3D模型
符号图
焊盘图
引脚图
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页面导航:
引脚图在P4Hot
原理图在P3
封装尺寸在P37P38P39P41P42
标记信息在P37P38P39P40
封装信息在P1P37P38P39P40P41P42
技术参数、封装参数在P5
电气规格在P6P7P8P9P10P11P12
导航目录
TLC27M4ID数据手册
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6000– 600 1200– 1200
N Package
T
A
= 25°C
V
DD
= 5 V
301 Units Tested From 2 Wafer Lots
Percentage of Units
–
%
V
IO
– Input Offset Voltage – μV
DISTRIBUTION OF TLC27M9
INPUT OFFSET VOLTAGE
40
35
30
25
20
15
10
5
0
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1OUT
1IN–
1IN +
V
DD
2IN +
2IN–
2OUT
4OUT
4IN –
4IN +
GND
3IN +
3IN –
3OUT
D, J, N, OR PW PACKAGE
(TOP VIEW)
3
2 1 2
0
1
9
9
1
0
11 12 1
3
4
5
6
7
8
18
17
16
15
14
4IN +
NC
GND
NC
3IN +
1IN +
NC
V
DD
NC
2IN +
FK PACKAGE
(TOP VIEW)
1IN
–
1OUT
NC
3OUT
3IN
–
4OUT
4IN
–
2IN
–
2OUT
NC
NC – No internal connection
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
www.ti.com
SLOS093D –OCTOBER 1987–REVISED OCTOBER 2012
LinCMOS™ PRECISION QUAD OPERATIONAL AMPLIFIERS
Check for Samples: TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
1
FEATURES
2
• Trimmed Offset Voltage
– TLC27M9 . . . 900 µV Max at T
A
= 25°C,
V
DD
= 5 V
• Input Offset Voltage Drift . . . Typically
0.1 µV/Month, Including the First 30 Days
• Wide Range of Supply Voltages Over Specified
Temperature Range:
– 0°C to 70°C . . . 3 V to 16 V
– –40°C to 85°C . . . 4 V to 16 V
– –55°C to 125°C . . . 4 V to 16 V
• Single-Supply Operation
• Common-Mode Input Voltage Range
Extends Below the Negative Rail (C-Suffix,
I-Suffix Types)
• Low Noise . . . Typically 32 nV/√Hz
at f = 1 kHz
• Low Power . . . Typically 2.1 mW at
T
A
= 25°C, V
DD
= 5 V
• Output Voltage Range Includes Negative Rail
• High Input Impedance . . . 10
12
Ω Typ
• ESD-Protection Circuitry
• Small-Outline Package Option Also Available
in Tape and Reel
• Designed-In Latch-Up Immunity
DESCRIPTION
The TLC27M4 and TLC27M9 quad operational
amplifiers combine a wide range of input offset
voltage grades with low offset voltage drift, high input
impedance, low noise, and speeds comparable to
that of general-purpose bipolar devices. These
devices use Texas Instruments silicon-gate
LinCMOS™ technology, which provides offset voltage
stability far exceeding the stability available with
conventional metal-gate processes.
The extremely high input impedance, low bias
currents, make these cost-effective devices ideal for
applications that have previously been reserved for
general-purpose bipolar products, but with only a
fraction of the power consumption.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2LinCMOS is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Copyright © 1987–2012, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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