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TLC27M4ID 其他数据使用手册 - TI(德州仪器)
制造商:
TI(德州仪器)
分类:
运算放大器
封装:
SOIC-14
描述:
TEXAS INSTRUMENTS TLC27M4ID 运算放大器, 四路, 525 kHz, 4个放大器, 0.43 V/µs, 4V 至 16V, SOIC, 14 引脚
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P4Hot
原理图在P3
封装尺寸在P37P38P39P41P42
标记信息在P37P38P39P40
封装信息在P1P37P38P39P40P41P42
技术参数、封装参数在P5
电气规格在P6P7P8P9P10P11P12
导航目录
TLC27M4ID数据手册
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TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
SLOS093D –OCTOBER 1987–REVISED OCTOBER 2012
www.ti.com
Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27M4 (10 mV)
to the high-precision TLC27M9 (900 μV). These advantages, in combination with good common-mode rejection
and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for
upgrading existing designs.
In general, many features associated with bipolar technology are available on LinCMOS™ operational amplifiers,
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC27M4 and
TLC27M9. The devices also exhibit low voltage single-supply operation, and low power consumption, making
them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage
range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density
system applications.
The device inputs and outputs are designed to withstand −100-mA surge currents without sustaining latch-up.
The TLC27M4 and TLC27M9 incorporate internal ESD-protection circuits that prevent functional failures at
voltages up to 2000 V as tested under MIL-STD-883C, Method 3015; however, care should be exercised in
handling these devices, as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for
operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of –55°C to 125°C.
AVAILABLE OPTIONS
PACKAGE
CHIP
V
IO
max
SMALL CHIP CERAMIC PLASTIC
T
A
FORM
TSSOP
AT 25°C
OUTLINE CARRIER DIP DIP
(Y)
(PW)
(1)
(D)
(1)
(FK) (J) (N)
900 µV TLC27M9CD — — TLC27M9CN — —
2 mV TLC27M4BCD — — TLC27M4BCN — —
0°C to 70°C
5 mV TLC27M4ACD — — TLC27M4ACN — —
10 mV TLC27M4CD — — TLC27M4CN TLC27M4CPW TLC27M4Y
900 µV TLC27M9ID — — TLC27M9IN — —
2 mV TLC27M4BID — — TLC27M4BIN — —
–40°C to 85°C
5 mV TLC27M4AID — — TLC27M4AIN — —
10 mV TLC27M4ID — — TLC27M4IN TLC27M41PW —
900 µV TLC27M9MD TLC27M9MFK TLC27M9MJ TLC27M9MN — —
–55°C to 125°C
10 mV TLC27M4MD TLC27M4MFK TLC27M4MJ TLC27M4MN — —
(1) The D and PW package is available taped and reeled. Add R suffix to the device type (e.g., TLC279CDR).
2 Submit Documentation Feedback Copyright © 1987–2012, Texas Instruments Incorporated
Product Folder Links: TLC27M4 TLC27M4A TLC27M4B TLC27M4Y TLC27M9
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