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TMP302CDRLR 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
湿度传感器
封装:
SOT-553-6
描述:
在微封装易于使用低功耗低供应温度开关 Easy-to-Use Low-Power Low-Supply TEMPERATURE SWITCH in MicroPackage
Pictures:
3D模型
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TMP302CDRLR数据手册
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若手册格式错乱，请下载阅览PDF原文件
4
TMP411
SBOS383D –DECEMBER 2006–REVISED DECEMBER 2016
www.ti.com
Product Folder Links: TMP411
Submit Documentation Feedback Copyright © 2006–2016, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7 Specifications
7.1 Absolute Maximum Ratings
MIN MAX UNIT
Input voltage Pins 2, 3, 4 only –0.5 V
S
+ 0.5 V
Input voltage Pins 6, 7, 8 only –0.5 7 V
Input current 10 mA
Power supply, V
s
7 V
Operating temperature range –55 127 °C
Junction temperature, T
J(max)
150 °C
Storage temperature, T
stg
–60 130 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±3000
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101
(2)
±1000
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V+ Supply voltage 2.7 3.3 5.5 V
T
A
Operating free-air temperature –40 125 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.4 Thermal Information
THERMAL METRIC
(1)
TMP411
UNITD (SOIC) DGK (VSSOP)
8 PINS 8 PINS
R
θJA
Junction-to-ambient thermal resistance 112.3 166.1 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 59.4 58.3 °C/W
R
θJB
Junction-to-board thermal resistance 53.0 86.7 °C/W
ψ
JT
Junction-to-top characterization parameter 13.6 7.5 °C/W
ψ
JB
Junction-to-board characterization parameter 52.4 85.2 °C/W
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