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LPC2148FBD64
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UM10139 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
User manual Rev. 4 — 23 April 2012 6 of 354
NXP Semiconductors
UM10139
Chapter 1: Introductory information
1.7 On-chip flash memory system
The LPC2141/2/4/6/8 incorporate a 32 kB, 64 kB, 128 kB, 256 kB, and 512 kB Flash
memory system, respectively. This memory may be used for both code and data storage.
Programming of the Flash memory may be accomplished in several ways: over the serial
built-in JTAG interface, using In System Programming (ISP) and UART0, or by means of
In Application Programming (IAP) capabilities. The application program, using the IAP
functions, may also erase and/or program the Flash while the application is running,
allowing a great degree of flexibility for data storage field firmware upgrades, etc. When
the LPC2141/2/4/6/8 on-chip bootloader is used, 32 kB, 64 kB, 128 kB, 256 kB, and
500 kB of Flash memory is available for user code.
The LPC2141/2/4/6/8 Flash memory provides minimum of 100,000 erase/write cycles and
20 years of data-retention.
1.8 On-chip Static RAM (SRAM)
On-chip Static RAM (SRAM) may be used for code and/or data storage. The on-chip
SRAM may be accessed as 8-bits, 16-bits, and 32-bits. The LPC2141/2/4/6/8 provide
8/16/32 kB of static RAM, respectively.
The LPC2141/2/4/6/8 SRAM is designed to be accessed as a byte-addressed memory.
Word and halfword accesses to the memory ignore the alignment of the address and
access the naturally-aligned value that is addressed (so a memory access ignores
address bits 0 and 1 for word accesses, and ignores bit 0 for halfword accesses).
Therefore valid reads and writes require data accessed as halfwords to originate from
addresses with address line 0 being 0 (addresses ending with 0, 2, 4, 6, 8, A, C, and E in
hexadecimal notation) and data accessed as words to originate from addresses with
address lines 0 and 1 being 0 (addresses ending with 0, 4, 8, and C in hexadecimal
notation). This rule applies to both off and on-chip memory usage.
The SRAM controller incorporates a write-back buffer in order to prevent CPU stalls
during back-to-back writes. The write-back buffer always holds the last data sent by
software to the SRAM. This data is only written to the SRAM when another write is
requested by software (the data is only written to the SRAM when software does another
write). If a chip reset occurs, actual SRAM contents will not reflect the most recent write
request (i.e. after a "warm" chip reset, the SRAM does not reflect the last write operation).
Any software that checks SRAM contents after reset must take this into account. Two
identical writes to a location guarantee that the data will be present after a Reset.
Alternatively, a dummy write operation before entering idle or power-down mode will
similarly guarantee that the last data written will be present in SRAM after a subsequent
Reset.

LPC2148FBD64 数据手册

NXP(恩智浦)
45 页 / 0.38 MByte
NXP(恩智浦)
354 页 / 1.56 MByte
NXP(恩智浦)
45 页 / 0.38 MByte
NXP(恩智浦)
24 页 / 0.6 MByte
NXP(恩智浦)
38 页 / 0.18 MByte

LPC2148 数据手册

NXP(恩智浦)
单芯片16位/ 32位微控制器;高达512 KB的闪存, ISP / IAP , USB 2.0全速设备, 10位ADC和DAC Single-chip 16-bit/32-bit microcontrollers; up to 512 kB flash with ISP/IAP, USB 2.0 full-speed device, 10-bit ADC and DAC
Philips(飞利浦)
NXP(恩智浦)
NXP  LPC2148FBD64  微控制器(MCU), 16/32位, ARM7, 512K闪存, 64LQFP
NXP(恩智浦)
ARM7 系列微控制器,NXP一系列 NXP 微控制器,基于 16/32 位 ARM7TDMI-S CPU ,带实时仿真和嵌入式追踪支持,将微控制器与 32 kB、64 kB、128 kB、256 kB 和 512 KB 嵌入式高速闪存相结合。 128 位宽存储器接口和独特的加速器体系结构实现在最大时钟频率时使用 32 位代码。高集成和低功耗 一系列串行通信接口和片上 SRAM 选项 备选 16 位 Thumb 模式将代码缩小 30%,而性能削弱最少。 32 位计时器,PWM 通道和多达 47 条 GPIO 线路 适用于工业控制和医疗系统 ### ARM7/9 微控制器,NXP
NXP(恩智浦)
NXP(恩智浦)
LPC2141/42/44/46/48 - 单芯片16位/32位微控制器;高达512 kB闪存,带ISP/IAP、USB 2.0全速设备、10位ADC和DAC
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