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P82B715D 用户编程技术手册 - TI(德州仪器)
制造商:
TI(德州仪器)
分类:
接口芯片
封装:
SOIC-8
描述:
TEXAS INSTRUMENTS P82B715D 专用接口, 4.5 V, 12 V, 8 引脚
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P82B715D数据手册
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TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Input Offset Voltage Drift ...Typically
0.1 µV/Month, Including the First 30 Days
D
Wide Range of Supply Voltages Over
Specified Temperature Range:
0°C to 70°C...3 V to 16 V
–40°C to 85°C...4 V to 16 V
–55°C to 125°C...5 V to 16 V
D
Single-Supply Operation
D
Common-Mode Input Voltage Range
Extends Below the Negative Rail (C-Suffix
and I-Suffix Types)
D
Low Noise . . . 25 nV/√Hz Typically at
f = 1 kHz (High-Bias Mode)
D
Output Voltage Range Includes Negative
Rail
D
High Input Impedance ...10
12
Ω Typ
D
ESD-Protection Circuitry
D
Small-Outline Package Option Also
Available in Tape and Reel
D
Designed-In Latch-Up Immunity
description
The TLC271 operational amplifier combines a
wide range of input offset voltage grades with low
offset voltage drift and high input impedance. In
addition, the TLC271 offers a bias-select mode
that allows the user to select the best combination of power dissipation and ac performance for a particular
application. These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset
voltage stability far exceeding the stability available with conventional metal-gate processes.
AVAILABLE OPTIONS
V
IO
max
PACKAGE
T
A
V
IO
max
AT 25°C
SMALL OUTLINE
(D)
CHIP CARRIER
(FK)
CERAMIC DIP
(JG)
PLASTIC DIP
(P)
2 mV TLC271BCD TLC271BCP
0°C to 70°C
2
mV
5 mV
TLC271BCD
TLC271ACD
— —
TLC271BCP
TLC271ACP
10 mV TLC271CD TLC271CP
2 mV TLC271BID TLC271BIP
–40°C to 85°C
2
mV
5 mV
TLC271BID
TLC271AID
— —
TLC271BIP
TLC271AIP
10 mV TLC271ID TLC271IP
–55°C to 125°C 10 mV TLC271MD TLC271MFK TLC271MJG TLC271MP
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC271BCDR).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
2
3
4
8
7
6
5
OFFSET N1
IN –
IN +
GND
BIAS SELECT
V
DD
OUT
OFFSET N2
D, JG, OR P PACKAGE
(TOP VIEW)
3 2 1 20 19
910111213
4
5
6
7
8
18
17
16
15
14
NC
V
DD
NC
OUT
NC
NC
IN –
NC
IN +
NC
FK PACKAGE
(TOP VIEW)
NC
OFFSET N1
NC
NC
NC
NC
GND
NC
NC – No internal connection
OFFSET N2
BIAS SELECT
LinCMOS is a trademark of Texas Instruments.
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