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TPS74901EVM-210 用户编程技术手册 - TI(德州仪器)
制造商:
TI(德州仪器)
分类:
开发套件
描述:
TEXAS INSTRUMENTS TPS74901EVM-210 评估板, TPS74901 可调 3A 稳压器
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P3Hot
典型应用电路图在P1P15P18
原理图在P11P15P20
封装尺寸在P25P27P28
标记信息在P25P26
封装信息在P24P25P26P27P28
技术参数、封装参数在P4
应用领域在P1P33
电气规格在P6
导航目录
TPS74901EVM-210数据手册
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TPS74901
SBVS082H –JUNE 2007–REVISED NOVEMBER 2015
www.ti.com
6.5 Electrical Characteristics
At T
J
= –40°C to 125° C, V
EN
= 1.1 V, V
IN
= V
OUT
+ 0.3 V, C
BIAS
= 0.1 μF, C
IN
= C
OUT
= 10 μF, C
NR
= 1 nF, I
OUT
= 50 mA, and
V
BIAS
= 5 V, unless otherwise noted. Typical values are at T
J
= 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
IN
Input voltage V
OUT
+ V
DO
5.5 V
V
BIAS
Bias pin voltage 2.7 5.5 V
V
REF
Internal reference (Adj.) T
J
= 25°C 0.798 0.802 0.806 V
Output voltage V
IN
= 5 V, I
OUT
= 3 V V
REF
3.6 V
Accuracy V
OUT
+ 2.2 V ≤ V
BIAS
≤ 5.5 V,
–2% ±0.5% 2%
V
OUT
(RGW package)
(1)
50 mA ≤ I
OUT
≤ 3 A
Accuracy V
OUT
+ 2.4 V ≤ V
BIAS
≤ 5.5 V,
–2% ±0.5% 2%
(KTW package)
(1)
50 mA ≤ I
OUT
≤ 3 A
V
OUT
/V
IN
Line regulation V
OUT (NOM)
+ 0.3 ≤ V
IN
≤ 5.5 V 0.03 %/V
V
OUT
/I
OUT
Load regulation 50 mA ≤ I
OUT
≤ 3 A 0.09 %/A
I
OUT
= 3 A,
V
IN
dropout voltage
(2)
120 280 mV
V
BIAS
– V
OUT (NOM)
≥ 3.25 V
(3)
V
DO
V
BIAS
dropout voltage
(2)
I
OUT
= 3 A, V
IN
= V
BIAS
1.31 1.75 V
V
OUT
= 80% × V
OUT (NOM)
, RGW
3.9 4.6 5.5
Package
I
CL
Current limit A
V
OUT
= 80% × V
OUT (NOM)
, KTW
3.8 4.6 5.5
Package
I
BIAS
Bias pin current 1 2 mA
Shutdown supply current
I
SHDN
V
EN
≤ 0.4 V 1 50 µA
(I
GND
)
I
FB
Feedback pin current –1 0.150 1 µA
1 kHz, I
OUT
= 1.5 A,
60
V
IN
= 1.8 V, V
OUT
= 1.5 V
Power-supply rejection
dB
(V
IN
to V
OUT
)
300 kHz, I
OUT
= 1.5 A,
30
V
IN
= 1.8 V, V
OUT
= 1.5 V
PSRR
1 kHz, I
OUT
= 1.5 A,
50
V
IN
= 1.8 V, V
OUT
= 1.5 V
Power-supply rejection
dB
(V
BIAS
to V
OUT
)
300 kHz, I
OUT
= 1.5 A,
30
V
IN
= 1.8 V, V
OUT
= 1.5 V
100 Hz to 100 kHz,
Noise Output noise voltage 25 × V
OUT
µV
RMS
I
OUT
= 3 A, C
SS
= 0.001 μF
t
STR
Minimum start-up time R
LOAD
for I
OUT
= 1 A, C
SS
= open 200 µs
I
SS
Soft-start charging current V
SS
= 0.4 V 440 nA
V
EN, HI
Enable input high level 1.1 5.5 V
V
EN, LO
Enable input low level 0 0.4 V
V
EN, HYS
Enable pin hysteresis 50 mV
V
EN, DG
Enable pin deglitch time 20 µs
I
EN
Enable pin current V
EN
= 5 V 0.1 1 µA
V
IT
PG trip threshold V
OUT
decreasing 85 90 94 %V
OUT
V
HYS
PG trip hysteresis 3 %V
OUT
V
PG, LO
PG output low voltage I
PG
= 1 mA (sinking), V
OUT
< V
IT
0.3 V
I
PG, LKG
PG leakage current V
PG
= 5.25 V, V
OUT
> V
IT
0.1 1 µA
Operating junction
T
J
–40 125 °C
temperature
Shutdown, temperature increasing 165
Thermal shutdown
T
SD
°C
temperature
Reset, temperature decreasing 140
(1) Adjustable devices tested at 0.8 V; resistor tolerance is not considered.
(2) Dropout is defined as the voltage from V
IN
to V
OUT
when V
OUT
is 3% below nominal.
(3) 3.25 V is a test condition of this device and can be adjusted by referring to Figure 6.
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