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CSD25481F4 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
MOS管
封装:
PICOSTAR-3
描述:
P 通道 NexFET 功率 MOSFET，CSD25481W4
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CSD25481F4数据手册
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CSD87381P
www.ti.com.cn
ZHCSAY2F –MARCH 2013–REVISED MARCH 2015
5 Specifications
5.1 Absolute Maximum Ratings
T
A
= 25°C (unless otherwise noted)
(1)
MIN MAX UNIT
V
IN
to P
GND
–0.8 30
V
SW
to P
GND
30
Voltage V
SW
to P
GND
(10 ns) 32 V
T
G
to V
SW
–8 10
B
G
to P
GND
–8 10
I
DM
Pulsed Current Rating
(2)
40 A
P
D
Power Dissipation
(3)
4 W
Sync FET, I
D
= 27, L = 0.1 mH 36
E
AS
Avalanche Energy mJ
Control FET, I
D
= 20, L = 0.1 mH 20
T
J
Operating Junction –55 150 °C
T
stg
Storage Temperature Range –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Pulse Duration ≤50 µs, duty cycle ≤0.01
(3) Device mounted on FR4 material with 1 inch
2
(6.45 cm
2
) Cu
5.2 Recommended Operating Conditions
T
A
= 25° (unless otherwise noted)
MIN MAX UNIT
V
GS
Gate Drive Voltage 4.5 8 V
V
IN
Input Supply Voltage 24 V
ƒ
SW
Switching Frequency C
BST
= 0.1 μF (min) 200 1500 kHz
No Airflow 15
Operating Current With Airflow (200 LFM) 20 A
With Airflow + Heat Sink 25
T
J
Operating Temperature 125 °C
5.3 Power Block Performance
T
A
= 25° (unless otherwise noted)
PARAMETER CONDITIONS MIN TYP MAX UNIT
V
IN
= 12 V, V
GS
= 5 V,
V
OUT
= 1.3 V, I
OUT
= 8 A,
P
LOSS
Power Loss
(1)
1 W
ƒ
SW
= 500 kHz,
L
OUT
= 0.3 µH, T
J
= 25ºC
T
G
to T
GR
= 0 V
I
QVIN
V
IN
Quiescent Current 10 µA
B
G
to P
GND
= 0 V
(1) Measurement made with six 10 µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across V
IN
to P
GND
pins and
using a high current 5 V driver IC.
Copyright © 2013–2015, Texas Instruments Incorporated 3
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