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CSD87333Q3DT 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
晶体管
封装:
PowerTDFN-8
描述:
30V、N 沟道同步降压 NexFET MOSFET™、SON3x3 电源块、15A 8-VSON-CLIP -55 to 150
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
典型应用电路图在P9
封装尺寸在P14P18P20P21
焊盘布局在P16
标记信息在P18
封装信息在P1P14P17P18P19P20P21
技术参数、封装参数在P3
应用领域在P1P5P6P9
电气规格在P4
导航目录
CSD87333Q3DT数据手册
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若手册格式错乱，请下载阅览PDF原文件
HD
HG
LG
LD
M0205-01
86330Q3D3 3x3 3MINRev0. .
LS
HS
HD
HG
LG
LD
M0206-01
86330Q3D3 3x3 3MINRev0. .
LS
HS
4
CSD87333Q3D
SLPS350A –FEBRUARY 2014–REVISED JANUARY 2017
www.ti.com
Product Folder Links: CSD87333Q3D
Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated
5.5 Electrical Characteristics
T
A
= 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS
Q1 Control FET Q2 Sync FET
UNIT
MIN TYP MAX MIN TYP MAX
STATIC CHARACTERISTICS
BV
DSS
Drain-to-source voltage V
GS
= 0 V, I
DS
= 250 µA 30 30 V
I
DSS
Drain-to-source leakage
current
V
GS
= 0 V, V
DS
= 20 V 1 1 µA
I
GSS
Gate-to-source leakage
current
V
DS
= 0 V, V
GS
= +10 / –8
V
100 100 nA
V
GS(th)
Gate-to-source threshold
voltage
V
DS
= V
GS
, I
DS
= 250 µA 0.75 0.95 1.20 0.75 0.95 1.20 V
R
DS(on)
Drain-to-source on
resistance
V
GS
= 3.5 V, I
DS
= 4 A 14.7 17.7 14.7 17.7
mΩV
GS
= 4.5 V, I
DS
= 4 A 13.4 16.1 13.4 16.1
V
GS
= 8 V, I
DS
= 4 A 11.9 14.3 11.9 14.3
g
fs
Transconductance V
DS
= 15 V, I
DS
= 4 A 43 43 S
DYNAMIC CHARACTERISTICS
C
ISS
Input capacitance
V
GS
= 0 V, V
DS
= 15 V,
ƒ = 1 MHz
509 662 509 662 pF
C
OSS
Output capacitance 222 289 222 289 pF
C
RSS
Reverse transfer capacitance 8.2 10.7 8.2 10.7 pF
R
G
Series gate resistance 3.4 6.8 3.4 6.8 Ω
Q
g
Gate charge total (4.5 V)
V
DS
= 15 V,
I
DS
= 4 A
3.5 4.6 3.5 4.6 nC
Q
gd
Gate charge gate-to-drain 0.3 0.3 nC
Q
gs
Gate charge gate-to-source 1.6 1.6 nC
Q
g(th)
Gate charge at V
th
0.6 0.6 nC
Q
OSS
Output charge V
DS
= 15 V, V
GS
= 0 V 5.3 5.3 nC
t
d(on)
Turnon delay time
V
DS
= 15 V, V
GS
= 4.5 V,
I
DS
= 4 A, R
G
= 2 Ω
2.1 2.1 ns
t
r
Rise time 3.9 3.9 ns
t
d(off)
Turnoff delay time 9.4 9.4 ns
t
f
Fall time 2.2 2.2 ns
DIODE CHARACTERISTICS
V
SD
Diode forward voltage I
DS
= 4 A, V
GS
= 0 V 0.80 1.0 0.80 1.0 V
Q
rr
Reverse recovery charge
V
DS
= 15 V, I
F
= 4 A,
di/dt = 300 A/µs
10 10 nC
t
rr
Reverse recovery time 11 11 ns
Max R
θJA
= 80 ° C/W
when mounted on 1 in
2
(6.45 cm
2
) of 2-oz
(0.071-mm) thick Cu.
Max R
θJA
= 150°C/W
when mounted on
minimum pad area of
2-oz (0.071-mm) thick
Cu.
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