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CSD87333Q3DT 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
晶体管
封装:
PowerTDFN-8
描述:
30V、N 沟道同步降压 NexFET MOSFET™、SON3x3 电源块、15A 8-VSON-CLIP -55 to 150
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
典型应用电路图在P9
封装尺寸在P14P18P20P21
焊盘布局在P16
标记信息在P18
封装信息在P1P14P17P18P19P20P21
技术参数、封装参数在P3
应用领域在P1P5P6P9
电气规格在P4
导航目录
CSD87333Q3DT数据手册
Page:
of 22 Go
若手册格式错乱，请下载阅览PDF原文件
0 1 2 3 4 5 6 7 8
0.94
0.96
0.98
1
1.02
1.04
1.06
1.08
−1.08
−0.72
−0.36
0
0.36
0.72
1.08
1.44
Output Voltage (V)
Power Loss, Normalized
SOA Temperature Adj (ºC)
V
IN
= 12V
V
GS
= 5V
f
SW
= 500kHz
L
OUT
= 1.0µH
I
OUT
= 15A
G001
0 400 800 1200 1600 2000 2400
0.92
0.96
1
1.04
1.08
1.12
1.16
1.2
−1.6
−0.8
0
0.8
1.6
2.39
3.19
3.99
Output Inductance (nH)
Power Loss, Normalized
SOA Temperature Adj (ºC)
V
IN
= 12V
V
GS
= 5V
V
OUT
= 3.3V
f
SW
= 500kHz
I
OUT
= 15A
G001
0 200 400 600 800 1000 1200 1400 1600
0.97
1
1.03
1.06
1.09
1.12
1.15
−0.6
0.0
0.6
1.2
1.8
2.4
3.0
Switching Frequency (kHz)
Power Loss, Normalized
SOA Temperature Adj (ºC)
V
IN
= 12V
V
GS
= 5V
V
OUT
= 3.3V
L
OUT
= 1.0µH
I
OUT
= 15A
G001
0 4 8 12 16 20 24 28
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
−3.0
−2.0
−1.0
0.0
1.0
2.0
3.0
4.0
Input Voltage (V)
Power Loss, Normalized
SOA Temperature Adj (ºC)
V
GS
= 5V
V
OUT
= 3.3V
L
OUT
=1.0µH
f
SW
= 500kHz
I
OUT
= 15A
G001
6
CSD87333Q3D
SLPS350A –FEBRUARY 2014–REVISED JANUARY 2017
www.ti.com
Product Folder Links: CSD87333Q3D
Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated
Typical Power Block Device Characteristics (continued)
The typical power block system characteristic curves (Figure 1 through Figure 9) are based on measurements made on a
PCB design with dimensions of 4 in (W) × 3.5 in (L) × 0.062 in (H) and 6 copper layers of 1-oz copper thickness. See
Applications for detailed explanation. T
A
= 125°C, unless stated otherwise.
Figure 6. Normalized Power Loss vs Switching Frequency Figure 7. Normalized Power Loss vs Input Voltage
Figure 8. Normalized Power Loss vs Output Voltage Figure 9. Normalized Power Loss vs Output Inductance
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