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CSD87355Q5D 其他数据使用手册 - TI（德州仪器）
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TI（德州仪器）
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MOS管
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CSD87355Q5D 同步降压 NexFET™ 电源块
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CSD87355Q5D数据手册
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HD
HG
LG
LD
M0189-01
5x6 QFN TTA MIN Rev1
LS
HS
HD
HG
LG
LD
M0190-01
5x6 QFN TTA MIN Rev1
LS
HS
4
CSD87350Q5D
ZHCS110E –MARCH 2011–REVISED FEBRUARY 2017
www.ti.com.cn
Copyright © 2011–2017, Texas Instruments Incorporated
(1) Equivalent based on application testing. See Equivalent System Performance section for details.
5.5 Electrical Characteristics
T
A
= 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS
Q1 CONTROL FET Q2 SYNC FET
UNIT
MIN TYP MAX MIN TYP MAX
STATIC CHARACTERISTICS
BV
DSS
Drain-to-source voltage V
GS
= 0 V, I
DS
= 250 μA 30 30 V
I
DSS
Drain-to-source leakage current V
GS
= 0 V, V
DS
= 20 V 1 1 μA
I
GSS
Gate-to-source leakage current V
DS
= 0 V, V
GS
= +10 / –8 100 100 nA
V
GS(th)
Gate-to-source threshold voltage V
DS
= V
GS
, I
DS
= 250 μA 1 2.1 0.75 1.4 V
Z
DS(on)
(1)
Effective AC on-impedance
V
IN
= 12 V, V
GS
= 5 V,
V
OUT
= 1.3 V, I
OUT
= 20 A,
ƒ
SW
= 500 kHz,
L
OUT
= 0.3 µH
5 1.2 mΩ
g
ƒs
Transconductance V
DS
= 15 V, I
DS
= 20 A 97 157 S
DYNAMIC CHARACTERISTICS
C
ISS
Input capacitance
V
GS
= 0 V, V
DS
= 15 V,
ƒ = 1 MHz
1360 1770 2950 3835 pF
C
OSS
Output capacitance 565 735 1300 1690 pF
C
RSS
Reverse transfer capacitance 19 25 50 65 pF
R
G
Series gate resistance 1.3 3 0.8 2 Ω
Q
g
Gate charge total (4.5 V)
V
DS
= 15 V,
I
DS
= 20 A
8.4 10.9 20 26 nC
Q
gd
Gate charge gate-to-drain 1.6 3.6 nC
Q
gs
Gate charge gate-to-source 2.6 4.3 nC
Q
g(th)
Gate charge at V
th
1.6 2.3 nC
Q
OSS
Output charge V
DS
= 17 V, V
GS
= 0 V 9.7 28 nC
t
d(on)
Turnon delay time
V
DS
= 15 V, V
GS
= 4.5 V,
I
DS
= 20 A, R
G
= 2 Ω
7 8 ns
t
r
Rise time 17 10 ns
t
d(off)
Turnoff delay time 13 33 ns
t
ƒ
Fall time 2.3 4.7 ns
DIODE CHARACTERISTICS
V
SD
Diode forward voltage I
DS
= 20 A, V
GS
= 0 V 0.85 1 0.77 1 V
Q
rr
Reverse recovery charge
V
dd
= 17 V, I
F
= 20 A,
di/dt = 300 A/μs
12.5 32 nC
t
rr
Reverse recovery time 22 28 ns
Max R
θJA
= 50°C/W
when mounted on 1 in
2
(6.45 cm
2
) of
2-oz (0.071-mm) thick
Cu.
Max R
θJA
= 102°C/W
when mounted on
minimum pad area of
2-oz (0.071-mm) thick
Cu.
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