Datasheet 搜索 > 接口芯片 > TI（德州仪器） > DS36954M 数据手册 > DS36954M 其他数据使用手册 5/9 页
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DS36954M 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
接口芯片
封装:
SOIC-20
Pictures:
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DS36954M数据手册
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DS1217M Nonvolatile Read/Write Cartridge
5 of 8
POWER-DOWN/POWER-UP CONDITION
POWER-DOWN/POWER-UP TIMING
(T
A
= 0°C to +70°C)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
CE at V
IH
Before Power-Down
t
PD
(Note 9) 0
s
V
CC
Slew from 4.5V to 0
(CE at V
IH
)
t
F
100
s
V
CC
Slew from 0 to 4.5V
(CE at V
IH
)
t
R
0
s
CE at V
IH
After Power-Up
t
REC
(Note 9) 2 125 ms
(T
A
= +25°C)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Expected Data Retention
Time
t
DR
(Note 10) 5 years
WARNING: Under no circumstances are negative undershoots of any amplitude allowed when the device is in
battery-backup mode.
Note 4:
WE is high for a read cycle.
Note 5:
OE = V
IH
or V
IL
. If OE = V
IH
during a write cycle, the output buffers remain in a high-impedance state.
Note 6:
If the CE low transition occurs simultaneously with or later than the WE high transition in Write Cycle 1, that output buffers remain in
a high-impedance state in this period.
Note 7:
If the CE high transition occurs prior to or simultaneously with the WE high transition in Write Cycle 1, the output buffers remain in a
high-impedance state in this period.
Note 8:
If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high-
impedance state in this period.
Note 9: Removing and installing the cartridge with power applied may disturb data.
Note 10: Each DS1217M I smarked with a 4-digit code AABB. AA designates the year of manufacture. BB designates the week of
manufacture. The expected t
DR
is defined as starting at the date of manufacture. This parameter is assured by component selection,
process control, and design. It is not measured directly during production testing.
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