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FDMS6681Z 其他数据使用手册 - Fairchild(飞兆/仙童)
制造商:
Fairchild(飞兆/仙童)
分类:
MOS管
封装:
Power-56-8
描述:
FAIRCHILD SEMICONDUCTOR FDMS6681Z 晶体管, MOSFET, P沟道, -49 A, -30 V, 0.0027 ohm, -10 V, -1.7 V
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FDMS6681Z数据手册
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FDMS6681Z P-Channel PowerTrench
®
MOSFET
www.fairchildsemi.com
4©2009 Fairchild Semiconductor Corporation
FDMS6681Z Rev.1.4
Figure 7.
0 50 100 150 200
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -22.1 A
V
DD
= -15 V
V
DD
= -20 V
V
DD
= -10 V
Gate Charge Characteristics
Figure 8.
0.1 1 10
600
1000
10000
20000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
30
Capa citance vs Drai n
to Source Voltage
Figure 9. Unclamped Inductive
Sw it ching Ca pab il it y
0.001 0.01 0.1 1 10 100
1
50
T
J
= 100
o
C
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE (ms)
-I
AS
, AVALANCHE CURRENT (A)
100
Figure 10.
25 50 75 100 125 150
0
20
40
60
80
100
120
140
R
θJC
= 1.7
o
C/W
V
GS
= -4.5 V
V
GS
= -10 V
-I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
Maximum Continuous Drain
C u r r e n t v s . Ca s e T e m p e rat u r e
Figure 11.
0 5 10 15 20 25 30
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
V
GS
= 0 V
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
,
GATE TO SOURCE VOLTAGE (V)
I
g
, GATE LEAKAGE CURRENT (A)
I
gss
vs V
gss
Figure 12.
0.1 1 10 80
0.1
1
10
100
1000
CURVE BENT TO
MEASURE DATA
DC
10 us
10 ms
1 ms
100 us
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJC
= 1.7
o
C/W
T
C
= 25
o
C
Fo rw ar d B ia s S af e
Operating Area
Typical Characteristics T
J
= 25 °C unless otherwise noted.
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