Datasheet 搜索 > MOS管 > Fairchild（飞兆/仙童） > FDS6890A 数据手册 > FDS6890A 其他数据使用手册 3/7 页
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FDS6890A 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
SOIC-8
描述:
FAIRCHILD SEMICONDUCTOR FDS6890A 双路场效应管, MOSFET, 双N沟道, 7.5 A, 20 V, 0.013 ohm, 4.5 V, 800 mV
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FDS6890A数据手册
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FDS6890A
FDS6890A Rev. C
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
a) 78° C/W when
mounted on a 0.5 in
2
pad of 2 oz. copper.
b) 125° C/W when
mounted on a 0.02 in
2
pad of 2 oz. copper.
c) 135° C/W when
mounted on a minimum pad.
Electrical Characteristics T
A
= 25 C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
µ
A
20 V
∆
BV
DSS
∆
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
µ
A, Referenced to 25
°
C
14
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 16 V, V
GS
= 0 V 1
µ
A
I
GSSF
Gate-Body Leakage Current,
Forward
V
GS
= 8 V, V
DS
= 0 V 100 nA
I
GSSR
Gate-Body Leakage Current,
Reverse
V
GS
= -8 V, V
DS
= 0 V -100 nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
µ
A
0.5 0.8 1.5 V
∆
V
GS(th)
∆
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
µ
A, Referenced to 25
°
C
-3.5
mV/
°
C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 4.5 V, I
D
=7.5 A
V
GS
= 4.5 V, I
D
=7.5 A, T
J
=125
°
C
V
GS
= 2.5 V, I
D
=6.5 A
0.013
0.021
0.016
0.018
0.034
0.022
Ω
I
D(on)
On-State Drain Current V
GS
= 10 V, V
DS
= 5 V 20 A
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 7.5 A 35 S
Dynamic Characteristics
C
iss
Input Capacitance 2130 pF
C
oss
Output Capacitance 545 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
270 pF
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time 13 24 ns
t
r
Turn-On Rise Time 26 42 ns
t
d(off)
Turn-Off Delay Time 65 90 ns
t
f
Turn-Off Fall Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Ω
23 37 ns
Q
g
Total Gate Charge 23 32 nC
Q
gs
Gate-Source Charge 3.2 nC
Q
gd
Gate-Drain Charge
V
DS
= 10 V, I
D
= 7.5 A,
V
GS
= 4.5 V,
4.4 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current 1.3 A
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
0.65 1.2 V
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