Datasheet 搜索 > MOS管 > Fairchild（飞兆/仙童） > FDS6890A 数据手册 > FDS6890A 其他数据使用手册 5/7 页
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FDS6890A 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
SOIC-8
描述:
FAIRCHILD SEMICONDUCTOR FDS6890A 双路场效应管, MOSFET, 双N沟道, 7.5 A, 20 V, 0.013 ohm, 4.5 V, 800 mV
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FDS6890A数据手册
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FDS6890A
FDS6890A Rev. C
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
Typical Characteristics (continued)
0.01 0.1 0.5 10 50 100 300
0
5
10
15
20
25
30
SINGLE PULSE TIME (SEC)
POWE R ( W)
SINGLE PULSE
R =135 C/W
T = 25 C
θ
JA
A
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T RANSIENT THERMAL RESISTANCE
r (t), NO RMALIZED EFFEC TIVE
1
S i n g l e P u l s e
D = 0.5
0.1
0. 0 5
0. 0 2
0. 0 1
0.2
D u t y C y c l e, D = t /t
1
2
T - T = P * R (t)
θ
JA
A
J
P(pk)
t
1
t
2
R (t ) = r( t) * R
R =
135
C/ W
θ
JA
θ
JA
θ
JA
0.01
0.1
1
10
100
0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
10ms
1ms
100
µ
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
0
800
1600
2400
3200
0 4 8 12 16 20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
0
1
2
3
4
5
0 6 12 18 24 30
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 7.5A
V
DS
= 5V
10V
15V
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