Datasheet 搜索 > MOS管 > Fairchild（飞兆/仙童） > FDS6890A 数据手册 > FDS6890A 其他数据使用手册 4/7 页
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FDS6890A 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
SOIC-8
描述:
FAIRCHILD SEMICONDUCTOR FDS6890A 双路场效应管, MOSFET, 双N沟道, 7.5 A, 20 V, 0.013 ohm, 4.5 V, 800 mV
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FDS6890A数据手册
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FDS6890A
FDS6890A Rev. C
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Typical Characteristics (continued)
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-50-250 255075100125150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 7.5A
V
GS
= 4.5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
V
SD
, BODY DIODE VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
J
=125
o
C
25
o
C
-55
o
C
V
GS
=0
0
0.01
0.02
0.03
0.04
0.05
12345
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
=3.8A
T
A
= 125
o
C
T
A
= 25
o
C
0
6
12
18
24
30
0.5 1 1.5 2 2.5 3
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.8
1
1.2
1.4
1.6
1.8
0 5 10 15 20 25 30
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
=1.8V
3.5V
3.0V
2.0V
2.5V
4.5
0
6
12
18
24
30
00.511.522.53
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
=4.5V
2.0V
1.8V
1.5V
2.5V
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