Datasheet 搜索 > MOS管 > Infineon（英飞凌） > IRF3704ZCSPBF 数据手册 > IRF3704ZCSPBF 产品手册 1/9 页
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IRF3704ZCSPBF 产品手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
D2PAK-263
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P7P8
标记信息在P7P8
技术参数、封装参数在P1
应用领域在P1
导航目录
IRF3704ZCSPBF数据手册
Page:
of 9 Go
若手册格式错乱，请下载阅览PDF原文件
www.irf.com 1
12/13/04
IRFR3704PbF
IRFU3704PbF
SMPS MOSFET
HEXFET
®
Power MOSFET
Benefits
V
DSS
R
DS(on)
max I
D
20V 9.5mΩ 75A
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
D-Pak I-Pak
IRFR3704 IRFU3704
l Ultra-Low R
DS(on)
l Very Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
Notes through are on page 9
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
Applications
l High Frequency Buck Converters for
Computer Processor Power
l 100% R
G
Tested
l Lead-Free
Absolute Maximum Ratings
Symbol Parameter Units
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Maximum Power Dissipation
e
P
D
@T
A
= 70°C
Maximum Power Dissipation
e
Linear Derating Factor W/°C
T
J
, T
STG
Junction and Storage Temperature Range °C
Thermal Resistance
Symbol Parameter Typ Max Units
R
θ
JC
Junction-to-Case
g
––– 1.7
R
θ
JA
Junction-to-Ambient (PCB Mount) *
g
––– 50 °C/W
R
θ
JA
Junction-to-Ambient
g
––– 110
V
A
W
-55 to +175
90
0.58
62
Max
75
f
63
f
300
20
± 20
PD - 95034A
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