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IRF3704ZCSPBF 产品手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
D2PAK-263
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P7P8
标记信息在P7P8
技术参数、封装参数在P1
应用领域在P1
导航目录
IRF3704ZCSPBF数据手册
Page:
of 9 Go
若手册格式错乱，请下载阅览PDF原文件
IRFR/U3704PbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C
––– 7.3 9.5
––– 11 14
V
GS(th)
Gate Threshold Voltage 1.0 ––– 3.0 V
––– ––– 10
––– ––– 100
Gate-to-Source Forward Leakage ––– ––– 200
Gate-to-Source Reverse Leakage ––– ––– -200
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Units
g
fs
Forward Transconductance 42 ––– ––– S
Q
g
Total Gate Charge ––– 19 –––
Q
gs
Gate-to-Source Charge ––– 8.1 ––– nC
Q
gd
Gate-to-Drain ("Miller") Charge ––– 6.4 –––
Q
OSS
Output Gate Charge ––– 16 24
V
GS
= 0V, V
DS
= 10V
R
G
Gate Resistance 0.3 ––– 3.2
Ω
t
d(on)
Turn-On Delay Time ––– 8.4 –––
t
r
Rise Time ––– 98 –––
t
d(off)
Turn-Off Delay Time ––– 12 ––– ns
t
f
Fall Time ––– 5.0 –––
C
iss
Input Capacitance ––– 1996 –––
C
oss
Output Capacitance ––– 1085 –––
C
rss
Reverse Transfer Capacitance ––– 155 –––
Avalanche Characteristics
Symbol
Parameter
Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
c
A
Diode Characteristics
Symbol
Parameter
Min
Typ
Max
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
––– 0.88 1.3
––– 0.82 –––
t
rr
Reverse Recovery Time ––– 38 57 ns
Q
rr
Reverse Recovery Charge ––– 45 68 nC
t
rr
Reverse Recovery Time ––– 41 62 ns
Q
rr
Reverse Recovery Charge ––– 50 75 nC
pF
A
Diode Forward Voltage V
––– ––– 75
f
––– ––– 300
m
Ω
µA
nA
V
GS
= 4.5V, I
D
= 12A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 20V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
T
J
= 125°C, I
F
= 35.5A, V
R
= 20V
di/dt = 100A/µs
e
T
J
= 125°C, I
S
= 35.5A, V
GS
= 0V
e
Conditions
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 35.5A, V
GS
= 0V
e
T
J
= 25°C, I
F
= 35.5A, V
R
= 20V
di/dt = 100A/µs
e
ƒ = 1.0MHz
216
71
MOSFET symbol
MaxTyp
–––
–––
Conditions
V
DS
= 25V, I
D
= 57A
I
D
= 28.4A
V
DS
= 10V
V
GS
= 4.5V
e
V
GS
= 0V
V
DS
= 10V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
e
V
GS
= 4.5V
e
V
DD
= 10V
I
D
= 28.4A
R
G
= 1.8
Ω
R
DS(on)
I
DSS
I
GSS
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
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