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MJB44H11G 其他数据使用手册 - ON Semiconductor（安森美）
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ON Semiconductor（安森美）
分类:
双极性晶体管
封装:
TO-263-3
描述:
ON SEMICONDUCTOR MJB44H11G. 功率晶体管, NPN, 80V, D2-PAK
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MJB44H11G数据手册
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若手册格式错乱，请下载阅览PDF原文件
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I
C
= 30 mA, I
B
= 0) V
CEO(sus)
80 − − Vdc
Collector Cutoff Current (V
CE
= Rated V
CEO
, V
BE
= 0) I
CES
− − 10
mA
Emitter Cutoff Current (V
EB
= 5 Vdc) I
EBO
− − 50
mA
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage (I
C
= 8 Adc, I
B
= 0.4 Adc) V
CE(sat)
− − 1.0 Vdc
Base−Emitter Saturation Voltage (I
C
= 8 Adc, I
B
= 0.8 Adc) V
BE(sat)
− − 1.5 Vdc
DC Current Gain (V
CE
= 1 Vdc, I
C
= 2 Adc) h
FE
60 − − −
DC Current Gain (V
CE
= 1 Vdc, I
C
= 4 Adc) 40 − −
DYNAMIC CHARACTERISTICS
Collector Capacitance (V
CB
= 10 Vdc, f
test
= 1 MHz)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
C
cb
−
−
130
230
−
−
pF
Gain Bandwidth Product (I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 20 MHz)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
f
T
−
−
50
40
−
−
MHz
SWITCHING TIMES
Delay and Rise Times(I
C
= 5 Adc, I
B1
= 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
t
d
+ t
r
−
−
300
135
−
−
ns
Storage Time(I
C
= 5 Adc, I
B1
= I
B2
= 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
t
s
−
−
500
500
−
−
ns
Fall Time(I
C
= 5 Adc, I
B1
= I
B2
= 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
t
f
−
−
140
100
−
−
ns
Figure 1. Thermal Response
t, TIME (ms)
0.01
0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2
1.0
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
Z
q
JC(t)
= r(t) R
q
JC
R
q
JC
= 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
SINGLE PULSE
RESISTANCE (NORMALIZED)
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.02
100 200
0.1
0.02
0.01
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