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MOCD213 其他数据使用手册 - ON Semiconductor（安森美）
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MOCD213数据手册
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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD2xxM Rev. 4.10 3
MOCD2xxM — 8-pin SOIC Dual-Channel Phototransistor Output Optocoupler
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. T
A
= 25°C unless otherwise specified.
Symbol Rating Value Unit
TOTAL DEVICE
T
STG
Storage Temperature -40 to +125 °C
T
A
Ambient Operating Temperature -40 to +100 °C
T
J
Junction Temperature -40 to +125 °C
T
SOL
Lead Solder Temperature 260 for 10 seconds °C
P
D
Total Device Power Dissipation @ T
A
= 25°C 240 mW
Derate Above 25°C 2.94 mW/°C
EMITTER
I
F
Continuous Forward Current 60 mA
I
F
(pk) Forward Current – Peak (PW = 100 µs, 120 pps) 1.0 A
V
R
Reverse Voltage 6.0 V
P
D
LED Power Dissipation @ T
A
= 25°C 90 mW
Derate Above 25°C 0.8 mW/°C
DETECTOR
I
C
Continuous Collector Current 150 mA
V
CEO
Collector-Emitter Voltage
MOCD207M, MOCD208M, MOCD213M 70 V
MOCD211M, MOCD217M 30 V
V
ECO
Emitter-Collector Voltage 7 V
P
D
Detector Power Dissipation @ T
A
= 25°C 150 mW
Derate Above 25°C 1.76 mW/°C
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