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MOCD213 其他数据使用手册 - ON Semiconductor（安森美）
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MOCD213数据手册
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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD2xxM Rev. 4.10 4
MOCD2xxM — 8-pin SOIC Dual-Channel Phototransistor Output Optocoupler
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Symbol Parameter Device Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage
MOCD217M I
F
= 1 mA 1.05 1.3 V
MOCD213M I
F
= 10 mA 1.15 1.5 V
MOCD207M,
MOCD208M,
MOCD211M
I
F
= 30 mA 1.25 1.5 V
I
R
Reverse Leakage Current All V
R
= 6 V 0.001 100 µA
C
IN
Input Capacitance All 18 pF
DETECTOR
I
CEO
Collector-Emitter Dark Current All
V
CE
= 10 V, T
A
= 25°C 1.0 50 nA
V
CE
= 10 V, T
A
= 100°C 1.0 µA
BV
CEO
Collector-Emitter Breakdown
Voltage
MOCD211M,
MOCD217M
I
C
= 100 µA 30 100 V
MOCD207M,
MOCD208M,
MOCD213M
I
C
= 100 µA 70 100 V
BV
ECO
Emitter-Collector Breakdown
Voltage
All I
E
= 100 µA 7 10 V
C
CE
Collector-Emitter Capacitance All f = 1.0 MHz, V
CE
= 0 7 pF
COUPLED
CTR Collector-Output Current
MOCD207M I
F
= 10 mA, V
CE
= 5 V 100 200 %
MOCD208M I
F
= 10 mA, V
CE
= 5 V 40 125 %
MOCD211M I
F
= 10 mA, V
CE
= 5 V 20 %
MOCD213M I
F
= 10 mA, V
CE
= 5 V 100 %
MOCD217M I
F
= 1 mA, V
CE
= 5 V 100 %
V
CE(SAT)
Collector-Emitter Saturation
Voltage
MOCD207M,
MOCD208M,
MOCD211M,
MOCD213M
I
C
= 2 mA, I
F
= 10 mA 0.4 V
MOCD217M I
C
= 100 µA, I
F
= 1 mA 0.4 V
t
on
Turn-On Time All
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100 (Figure 8)
7.5 µs
t
off
Turn-Off Time All
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100 (Figure 8)
5.7 µs
t
r
Rise Time All
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100 (Figure 8)
3.2 µs
t
f
Fall Time All
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100 (Figure 8)
4.7 µs
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