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NCP1055P44G
器件3D模型
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NCP1055P44G数据手册
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NCP1050, NCP1051, NCP1052, NCP1053, NCP1054, NCP1055
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6
MAXIMUM RATINGS
Rating Symbol Value Unit
Power Switch and Startup Circuit
Drain Voltage Range
Drain Current Peak During Transformer Saturation
V
DS
I
DS(pk)
*0.3 to 700
2.0 x I
lim
Max
V
A
Power Supply/V
CC
Bypass and Control Input
Voltage Range
Current
V
IR
I
max
*0.3 to 10
100
V
mA
Thermal Characteristics
P Suffix, Plastic Package Case 626A01
JunctiontoLead
JunctiontoAir, 2.0 Oz. Printed Circuit Copper Clad
0.36 Sq. Inch
1.0 Sq. Inch
ST Suffix, Plastic Package Case 318E04
JunctiontoLead
JunctiontoAir, 2.0 Oz. Printed Circuit Copper Clad
0.36 Sq. Inch
1.0 Sq. Inch
R
JL
R
JA
R
JL
R
JA
9.0
77
60
14
74
55
°C/W
Operating Junction Temperature T
J
*40 to +150 °C
Storage Temperature T
stg
*65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device series contains ESD protection and exceeds the following tests:
Pins 13: Human Body Model 2000 V per JEDEC JESD22A114F.
Machine Model Method 400 V per JEDEC JESD22A115A.
Pin 5: Human Body Model 1000 V per JEDEC JESD22A114F.
Machine Model Method 400 V per JEDEC JESD22A115A.
Pin 5 is connected to the power switch and startup circuits, and is rated only to the max voltage of the part, or 700 V.
Charged Device Model (CDM) 1000 V per JEDEC Standard JESD22C101E.
2. This device contains Latchup protection and exceeds $100 mA per JEDEC Standard JESD78.

NCP1055P44G 数据手册

ON Semiconductor(安森美)
25 页 / 0.26 MByte
ON Semiconductor(安森美)
27 页 / 0.39 MByte
ON Semiconductor(安森美)
2 页 / 0.03 MByte
ON Semiconductor(安森美)
26 页 / 0.29 MByte

NCP1055P44 数据手册

ON Semiconductor(安森美)
单片高电压门控振荡器电源开关稳压器 Monolithic High Voltage Gated Oscillator Power Switching Regulator
ON Semiconductor(安森美)
不需要辅助偏置绕组/欠压锁定/热关闭
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