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PC817X3NIP1B 其他数据使用手册 - Sharp（夏普）
制造商:
Sharp（夏普）
封装:
SMD-4
描述:
PC817X3NIP1B 编带
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P5
标记信息在P9
技术参数、封装参数在P6
电气规格在P6P9
导航目录
PC817X3NIP1B数据手册
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PC817X*NIP1B
5/10
3. Ratings and characteristics
3.1 Absolute maximum ratings Ta=25℃
Parameter
Symbol
Rating
Unit
Input
*1 Forward current
I
F
50
mA
*2 Peak forward current
I
FM
1
A
Reverse voltage V
R
6 V
*1 Power dissipation
P
70
mW
Output
Collector-emitter voltage
V
CEO
80
V
Emitter-collector voltage
V
ECO
6
V
Collector current
I
c
50
mA
*1 Collector power dissipation P
c
150 mW
*1 Total power dissipation
P
tot
200
mW
Operating temperature
T
opr
-30 to +100
℃
Storage temperature
T
stg
-55 to +125
℃
*3 Isolation voltage
V
iso(rms)
5
kV
*4 Soldering temperature T
sol
270
℃
3.2 Electro-optical characteristics Ta=25℃
Parameter Symbol Condition MIN. TYP. MAX. Unit
Input
Forward voltage V
F
I
F
=20mA - 1.2 1.4 V
Peak forward voltage V
FM
I
FM
=0.5A - - 3.0 V
Reverse current I
R
V
R
=4V - - 10
μA
Terminal capacitance C
t
V=0, f=1kHz - 30 250 pF
Output
Dark current I
CEO
V
CE
=50V, I
F
=0 - - 100 nA
Collector-emitter breakdown voltage BV
CEO
I
c
=0.1mA I
F
=0 80 - - V
Emitter-collector breakdown voltage BV
ECO
I
E
=10μA, I
F
=0
6 - - V
Transfer
charac-
teristics
Collector current I
c
I
F
=5mA, V
CE
=5V 2.5 - 30 mA
Collector-emitter saturation voltage V
CE(sat)
I
F
=20mA I
c
=1mA - 0.1 0.2 V
Isolation resistance R
ISO
DC500V 40 to 60%RH
5×10
10
10
11
-
Ω
Floating capacitance C
f
V=0, f=1MHz - 0.6 1.0 pF
Cut-off frequency f
c
V
CE
=5V, I
c
=2mA
R
L
=100
Ω
, -3dB
- 80 - kHz
Rise time
tr
V
CE
=2V I
c
=2mA
R
L
=100Ω
-
4
18
μ
s
Fall time t
f
- 3 18
μs
*1 The derating factors of absolute maximum ratings due to ambient temperature are shown in Fig. 1to 4.
*2 Pulse width≦100μs, Duty ratio : 0.001 (Refer to Fig. 5)
*3 AC for 1 min, 40 to 60%RH
*4 For 10s
REFERENCE
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