Datasheet 搜索 > MOS管 > ROHM Semiconductor（罗姆半导体） > RRQ045P03TR 数据手册 > RRQ045P03TR 其他数据使用手册 2/12 页
￥ 0.556
RRQ045P03TR 其他数据使用手册 - ROHM Semiconductor（罗姆半导体）
制造商:
ROHM Semiconductor（罗姆半导体）
分类:
MOS管
封装:
TSOT-23-6
描述:
P-沟道 30 V 35 mOhm 1.25 W 表面贴装 Mosfet - T表面贴装-6
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
标记信息在P1
封装信息在P1
技术参数、封装参数在P1
电气规格在P2P3
导航目录
RRQ045P03TR数据手册
Page:
of 12 Go
若手册格式错乱，请下载阅览PDF原文件
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRQ045P03
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
lThermal resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
R
thJA
*4
-
-
208
°C/W
R
thJA
*3
-
-
100
°C/W
Thermal resistance, junction - ambient
lElectrical characteristics(T
a
= 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
V
Breakdown voltage
temperature coefficient
ΔV
(BR)DSS
ΔT
j
I
D
= -1mA
referenced to 25°C
-
-25
-
mV/°C
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, I
D
= -1mA
-30
-
-
mA
Gate - Source leakage current
I
GSS
V
GS
= 20V, V
DS
= 0V
-
-
10
mA
Zero gate voltage drain current
I
DSS
V
DS
= -30V, V
GS
= 0V
-
-
-1
V
Gate threshold voltage
temperature coefficient
ΔV
(GS)th
ΔT
j
I
D
= -1mA
referenced to 25°C
-
3.9
-
mV/°C
Gate threshold voltage
V
GS (th)
V
DS
= -10V, I
D
= -1mA
-1.0
-
-2.5
Static drain - source
on - state resistance
R
DS(on)
*5
V
GS
= -10V, I
D
= -4.5A
-
25
35
-
44
62
mW
V
GS
= -4.5V, I
D
= -2.2A
-
34
48
V
GS
= -4.0V, I
D
= -2.2A
-
38
53
V
GS
= -10V, I
D
= -4.5A, T
j
=125°C
W
Transconductance
g
fs
*5
V
DS
= -10V, I
D
= -4.5A
3.5
8.0
-
S
Gate input resistannce
R
G
f = 1MHz, open drain
-
14
-
2/11
2013.01 - Rev.C
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
