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STD2N105K5 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
晶体管, MOSFET, N沟道, 1.5 A, 1.05 kV, 6 ohm, 10 V, 4 V
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STD2N105K5数据手册
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This is information on a product in full production.
November 2014 DocID026321 Rev 3 1/21
STD2N105K5, STP2N105K5,
STU2N105K5
N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh™ K5
Power MOSFETs in DPAK, TO-220 and IPAK packages
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
• Industry’s lowest R
DS(on)
x area
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
'7$%
*
6
AM01476v1
TO-220
1
2
3
TAB
1
3
TAB
DPAK
IPAK
3
2
1
TAB
Order codes V
DS
R
DS(on)
max I
D
P
TOT
STD2N105K5
1050 V 8 Ω 1.5 A 60 WSTP2N105K5
STU2N105K5
Table 1. Device summary
Order codes Marking Package Packaging
STD2N105K5
2N105K5
DPAK Tape and reel
STP2N105K5 TO-220
Tube
STU2N105K5 IPAK
www.st.com
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