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STD2N105K5 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
晶体管, MOSFET, N沟道, 1.5 A, 1.05 kV, 6 ohm, 10 V, 4 V
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STD2N105K5数据手册
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DocID026321 Rev 3 3/21
STD2N105K5, STP2N105K5, STU2N105K5 Electrical ratings
21
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate- source voltage ±30 V
I
D
Drain current (continuous) at T
C
= 25 °C 1.5 A
I
D
Drain current (continuous) at T
C
= 100 °C 0.95 A
I
DM
(1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 6 A
P
TOT
Total dissipation at T
C
= 25 °C 60 W
I
AR
Max current during repetitive or single pulse avalanche 0.5 A
E
AS
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=0.5 A, V
DD
= 50 V)
90 mJ
dv/dt
(2)
2. I
SD
≤ 1.5 A, di/dt ≤ 100 A/µs, V
DS(peak)
≤ V
(BR)DSS.
Peak diode recovery voltage slope 4.5 V/ns
dv/dt
(3)
3. V
DS
≤ 840 V
MOSFET dv/dt ruggedness 50 V/ns
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 2.08 °C/W
R
thj-amb
Thermal resistance junction-ambient max 62.50 °C/W
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