Datasheet 搜索 > MOS管 > ST Microelectronics（意法半导体） > STD4N80K5 数据手册 > STD4N80K5 产品封装文件 4/23 页
￥ 0.345
STD4N80K5 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
N 通道 MDmesh™ K5 系列，SuperMESH5™, STMicroelectronics### MOSFET 晶体管，STMicroelectronics
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
STD4N80K5数据手册
Page:
of 23 Go
若手册格式错乱，请下载阅览PDF原文件
Electrical characteristics STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
4/23 DocID025105 Rev 3
2 Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 1 mA, V
GS
= 0 800 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= 800 V 1 µA
V
DS
= 800 V, T
C
=125 °C 50 µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20 V ±10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 100 µA 3 4 5 V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 1.5 A 2.1 2.5 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0
- 175 - pF
C
oss
Output capacitance - 18 - pF
C
rss
Reverse transfer
capacitance
-0.5-pF
C
o(tr)
(1)
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
oss
when
V
DS
increases from 0 to 80% V
DSS
Equivalent
capacitance time
related
V
DS
= 0 to 640 V, V
GS
= 0 - 26 - pF
C
o(er)
(2)
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent
capacitance energy
related
V
DS
= 0 to 640 V, V
GS
= 0 - 11 - pF
R
g
Gate input resistance f=1 MHz, I
D
= 0 - 15 - Ω
Q
g
Total gate charge
V
DD
= 640 V, I
D
= 3 A,
V
GS
= 10 V
(see Figure 19)
-10.5-nC
Q
gs
Gate-source charge - 2 - nC
Q
gd
Gate-drain charge - 7.5 - nC
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
