Datasheet 搜索 > MOS管 > ST Microelectronics（意法半导体） > STD4N80K5 数据手册 > STD4N80K5 产品封装文件 6/23 页
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STD4N80K5 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
N 通道 MDmesh™ K5 系列，SuperMESH5™, STMicroelectronics### MOSFET 晶体管，STMicroelectronics
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STD4N80K5数据手册
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Electrical characteristics STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
6/23 DocID025105 Rev 3
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for DPAK and
IPAK
Figure 3. Thermal impedance for DPAK and
IPAK
I
D
10
1
0.1
0.1
1
100
V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
0.01
AM15986v1
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
I
D
10
1
0.1
0.1
1
100
V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
0.01
AM15987v1
Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220
I
D
10
1
0.1
0.1
1
100
V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
0.01
AM15988v1
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