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STD4N80K5 产品封装文件 - ST Microelectronics（意法半导体）
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ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
N 通道 MDmesh™ K5 系列，SuperMESH5™, STMicroelectronics### MOSFET 晶体管，STMicroelectronics
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STD4N80K5数据手册
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DocID025105 Rev 3 5/23
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5 Electrical characteristics
23
The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD
capability of the device. The Zener voltage is appropriate for efficient and cost-effective
intervention to protect the device integrity. These integrated Zener diodes thus eliminate the
need for external components.
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 400 V, I
D
= 1.5 A,
R
G
= 4.7
Ω
, V
GS
= 10 V
(see Figure 18)
- 16.5 - ns
t
r
Rise time - 15 - ns
t
d(off)
Turn-off-delay time - 36 - ns
t
f
Fall time - 21 - ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 3 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 12 A
V
SD
(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage I
SD
= 3 A, V
GS
= 0 - 1.5 V
t
rr
Reverse recovery time
I
SD
= 3 A, di/dt = 100 A/µs
V
DD
= 60 V
(see Figure 20)
-242 ns
Q
rr
Reverse recovery charge - 1.42 µC
I
RRM
Reverse recovery current - 12 A
t
rr
Reverse recovery time
I
SD
= 3 A, di/dt = 100 A/µs
V
DD
= 60 V T
J
= 150 °C
(see Figure 20)
-373 ns
Q
rr
Reverse recovery charge - 1.98 µC
I
RRM
Reverse recovery current - 10.5 A
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)GSO
Gate-source breakdown
voltage
I
GS
= ± 1 mA, I
D
=0 30 - V
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