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STD7N52DK3 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
STMICROELECTRONICS STD7N52DK3 晶体管, MOSFET, N沟道, 6 A, 525 V, 0.95 ohm, 10 V, 3.75 V
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STD7N52DK3数据手册
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DPAK
1
2
3
TO-220FP
1
3
2
TAB
D(2, TAB)
G(1)
S(3)
AM01475V1
Features
Order codes
V
DS
R
DS(on)
max. I
D
P
TOT
STD7N52DK3
525 V 1.15 Ω 6 A
90 W
STF7N52DK3 25 W
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
• Improved diode reverse recovery characteristics
• Zener-protected
Applications
• Switching applications
Description
These devices are developed using the revolutionary N-channel
SuperFREDmesh3™ technology. They associate all advantages of reduced on-
resistance, Zener gate protection and very high dv/dt capability with a fast body-drain
recovery diode. Such series complements the FDmesh™ advanced technology.
Product status links
STD7N52DK3
STF7N52DK3
Product summary
STD7N52DK3
Order code STD7N52DK3
Marking 7N52DK3
Package DPAK
Packing Tape and reel
STF7N52DK3
Order code STF7N52DK3
Marking 7N52DK3
Package TO-220FP
Packing Tube
N-channel 525 V, 0.95 Ω typ., 6 A, SuperFREDmesh3™ Power MOSFETs
in DPAK and TO-220FP packages
STD7N52DK3, STF7N52DK3
Datasheet
DS6515 - Rev 3 - October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
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