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STD7N52DK3 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
STMICROELECTRONICS STD7N52DK3 晶体管, MOSFET, N沟道, 6 A, 525 V, 0.95 ohm, 10 V, 3.75 V
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STD7N52DK3数据手册
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1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
DPAK TO-220FP
V
DS
Drain-source voltage 525 V
V
GS
Gate-source voltage ±30 V
I
D
Drain current (continuous) at T
C
= 25 °C
6
6
(1)
A
Drain current (continuous) at T
C
= 100 °C
4
4
(1)
A
I
DM
(2)
Drain current (pulsed) 24
24
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C
90 25 W
I
AR
(3)
Avalanche current, repetitive or non-repetitive 3 A
E
AS
(4)
Single pulse avalanche energy 110 mJ
dv/dt
(5)
Peak diode recovery voltage slope 20 V/ns
di/dt
(5)
Diode reverse recovery current slope 400 A/ns
V
ISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink
(t = 1 s, T
C
= 25 °C)
2.5 kV
T
stg
Storage temperature range
-55 to 150 °C
T
J
Operating junction temperature range
1. This value is limited by maximum junction temperature.
2. Pulse width is limited by safe operating area.
3. Pulse width is limited by T
Jmax
.
4. Starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V
5. I
SD
≤ 6 A, V
DS(peak)
≤ V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
Table 2. Thermal data
Symbol
Parameter
Value
Unit
DPAK TO-220FP
R
thj-case
Thermal resistance junction-case 1.39 5 °C/W
R
thj-pcb
(1)
Thermal resistance junction-pcb 50 °C/W
R
thj-amb
Thermal resistance junction-ambient 62.5 °C/W
1. When mounted on an 1-inch² FR-4, 2oz Cu board.
STD7N52DK3, STF7N52DK3
Electrical ratings
DS6515 - Rev 3
page 2/19
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