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4
TMP708
ZHCS769B DECEMBER 2011REVISED DECEMBER 2016
www.ti.com.cn
Copyright © 2011–2016, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
Voltage
Supply, VCC –0.3 6
VInput, SET and HYST –0.3 V
CC
+ 0.3
Output, OT –0.3 6
Current
Input 20
mA
Output 20
Temperature
Operating, T
A
–40 125
°CJunction, T
J
150
Storatge, T
stg
–65 150
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±4000
VCharged-device model (CDM), per JEDEC specification JESD22-C101
(2)
±1000
Machine model (MM) ±200
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V
CC
Supply voltage 2.7 5.5 V
T
A
Operating temperature 0 125 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC
(1)
TMP708
UNITDBV (SOT-23)
5 PINS
R
θJA
Junction-to-ambient thermal resistance 217.9 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 86.3 °C/W
R
θJB
Junction-to-board thermal resistance 44.6 °C/W
ψ
JT
Junction-to-top characterization parameter 4.4 °C/W
ψ
JB
Junction-to-board characterization parameter 43.8 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance N/A °C/W

TMP421AIDCNR 数据手册

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