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FDG6321C 产品设计参考手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
封装:
SOT-363-6
描述:
双路场效应管, MOSFET, 互补N与P沟道, 25 V, 500 mA, 0.45 ohm, SC-70, 表面安装
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3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
型号编码规则在P9
标记信息在P1P9
技术参数、封装参数在P8
应用领域在P7
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FDG6321C数据手册
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若手册格式错乱，请下载阅览PDF原文件
Rev. A, March 2004
5
©2004 Fairchild Semiconductor Corporation
For example, the calculation of the temperature rise resulting from single 2kW power pulse
applied to FQA11N90C during 1µs can be expressed as follows:
The applied power is substantial but the temperature rise is only 3 degrees. Note that a power
dissipation rating specified in the datasheet is a steady state power rating, and in a relatively
short time the Power MOSFET can handle even greater power pulse.
In the above example, however, transient thermal resistance of 1µs is not available in Figure
6. In cases where the given time is too short and out of the graph range, the single pulse tran-
sient thermal resistance is known to be proportionate to the square root of time. So Z
ΘJC
(1µs)
becomes
where
Z
ΘJC
(10µs): taken from Figure 6
The above thermal response is based on a rectangular power pulse. It is possible to obtain a
response for arbitrary shapes. However, since the mathematical solution would be very com-
plex, it would be easiest to convert it to an equivalent rectangular pulse. Some examples for
triangular and sine wave power pulses are shown in Figure 7.
Figure 7. Conversion of Power Pulses
The equation (3) can also be applied to applications that have repetitive pulses. The transient
thermal resistance for repetitive pulses can be approximated as follows
[3]
where
t
1
: pulse width of the power pulse
t
2
: period of the power pulse
TP
D
Z
ΘJC
1µs()=
2000 1.49 10
3–
× 3°C≈×=
Z
ΘJC
1µs()Z
ΘJC
10µs()
1µs
10µs
--------------×=
4.72 10
3–
× 0.1 1.49 10
3–
×=×=
t
0.71t
P
0.7P
t
0.91t
P
0.7P
Z
ΘJC
t()
t
1
t
2
----- 1
t
1
t
2
-----–
rt
1
t
2
+()rt
1
()rt
2
()–++ R
ΘJC
=
t
1
t
2
-----
R
ΘJC
1
t
1
t
2
-----–
Z
ΘJC
t
1
t
2
+()Z
ΘJC
t
1
()Z
ΘJC
t
2
()–++= 4()
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